
Discrete Semiconductor Products
RBQ30NS100AFHTL
ActiveRohm Semiconductor
LOW IR, 100V, 30A, TO-263S (D2PAK), SCHOTTKY BARRIER DIODE FOR AUTOMOTIVE
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Discrete Semiconductor Products
RBQ30NS100AFHTL
ActiveRohm Semiconductor
LOW IR, 100V, 30A, TO-263S (D2PAK), SCHOTTKY BARRIER DIODE FOR AUTOMOTIVE
Technical Specifications
Parameters and characteristics for this part
| Specification | RBQ30NS100AFHTL |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 30 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Qualification | AEC-Q101 |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | LPDS |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 770 mV |
RBQ30 Series
Low IR, 100V, 30A, TO-263S (D2PAK), Schottky Barrier Diode for Automotive
| Part | Mounting Type | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Current - Reverse Leakage @ Vr | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction | Supplier Device Package | Technology | Voltage - Forward (Vf) (Max) @ If [Max] | Qualification | Grade | Package / Case | Operating Temperature - Junction [Max] | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | Surface Mount | 30 A | 1 Pair Common Cathode | 200 µA | 200 mA 500 ns | 100 V | 150 ¯C | TO-263S | Schottky | 770 mV | AEC-Q101 | Automotive | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | |||
Rohm Semiconductor | Surface Mount | 30 A | 1 Pair Common Cathode | 200 µA | 200 mA 500 ns | 100 V | LPDS | Schottky | 770 mV | AEC-Q101 | Automotive | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 °C | |||
Rohm Semiconductor | Through Hole | 15 A | 1 Pair Common Cathode | 450 µA | 200 mA 500 ns | 45 V | 150 ¯C | TO-220FN | Schottky | 650 mV | TO-220-3 Full Pack | |||||
Rohm Semiconductor | Through Hole | 15 A | 1 Pair Common Cathode | 200 µA | 200 mA 500 ns | 65 V | 150 ¯C | TO-220FN | Schottky | TO-220-3 Full Pack | 690 mV | |||||
Rohm Semiconductor | Through Hole | 200 mA 500 ns | 45 V | 150 ¯C | TO-220FN-2 | Schottky | TO-220-2 Full Pack | 590 mV | 30 A | |||||||
Rohm Semiconductor | Surface Mount | 200 mA 500 ns | 45 V | 150 ¯C | LPDS | Schottky | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 590 mV | 30 A | |||||||
Rohm Semiconductor | Surface Mount | 15 A | 1 Pair Common Cathode | 200 µA | 200 mA 500 ns | 45 V | 150 ¯C | LPDS | Schottky | 650 mV | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | |||||
Rohm Semiconductor | Surface Mount | 15 A | 1 Pair Common Cathode | 200 µA | 200 mA 500 ns | 65 V | 150 ¯C | LPDS | Schottky | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 690 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RBQ30 Series
ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for phone and various portable electronics.
Documents
Technical documentation and resources