Discrete Semiconductor Products

STD7NM80-1

Obsolete

STMicroelectronics

MOSFET N-CH 800V 6.5A IPAK

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Discrete Semiconductor Products

STD7NM80-1

Obsolete

STMicroelectronics

MOSFET N-CH 800V 6.5A IPAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD7NM80-1

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	1.05 Ohm
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STD7 Series

N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh Power MOSFET in DPAK package

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package
STMicroelectronics STD7NM50N	DPAK	4 V	400 pF	45 W	25 V	780 mOhm	N-Channel	150 °C	-55 °C	MOSFET (Metal Oxide)	Surface Mount	12 nC	500 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	5 A
STMicroelectronics STD7N52DK3	DPAK	4.5 V		90 W	30 V	1.15 Ohm	N-Channel			MOSFET (Metal Oxide)	Surface Mount		525 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	6 A	150 °C	870 pF
STMicroelectronics STD7NM80	DPAK	5 V	620 pF	90 W	30 V	1.05 Ohm	N-Channel	150 °C	-55 °C	MOSFET (Metal Oxide)	Surface Mount	18 nC	800 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	6.5 A
STMicroelectronics STD7NM80-1	TO-251	5 V	620 pF	90 W	30 V	1.05 Ohm	N-Channel	150 °C	-55 °C	MOSFET (Metal Oxide)	Through Hole	18 nC	800 V	IPAK TO-251-3 Short Leads TO-251AA	10 V	6.5 A			IPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.08
	Tube	1	$ 2.57
		75	$ 2.06

Description

General part information

STD7 Series

MDmesh technology applies the benefits of the multiple drain process to STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics.

Documents

Technical documentation and resources