STD7 Series

N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh Power MOSFET in DPAK package

Catalog

N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh Power MOSFET in DPAK package

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package
STMicroelectronics STD7NM50N	DPAK	4 V	400 pF	45 W	25 V	780 mOhm	N-Channel	150 °C	-55 °C	MOSFET (Metal Oxide)	Surface Mount	12 nC	500 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	5 A
STMicroelectronics STD7N52DK3	DPAK	4.5 V		90 W	30 V	1.15 Ohm	N-Channel			MOSFET (Metal Oxide)	Surface Mount		525 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	6 A	150 °C	870 pF
STMicroelectronics STD7NM80	DPAK	5 V	620 pF	90 W	30 V	1.05 Ohm	N-Channel	150 °C	-55 °C	MOSFET (Metal Oxide)	Surface Mount	18 nC	800 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	6.5 A
STMicroelectronics STD7NM80-1	TO-251	5 V	620 pF	90 W	30 V	1.05 Ohm	N-Channel	150 °C	-55 °C	MOSFET (Metal Oxide)	Through Hole	18 nC	800 V	IPAK TO-251-3 Short Leads TO-251AA	10 V	6.5 A			IPAK

Catalog

N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh Power MOSFET in DPAK package

Description

MDmesh technology applies the benefits of the multiple drain process to STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics.