Discrete Semiconductor Products
STD7NM80
ActiveSTMicroelectronics
N-CHANNEL 800 V, 0.95 OHM, 6.5 A MDMESH POWER MOSFET IN DPAK PACKAGE
Discrete Semiconductor Products
STD7NM80
ActiveSTMicroelectronics
N-CHANNEL 800 V, 0.95 OHM, 6.5 A MDMESH POWER MOSFET IN DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD7NM80 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.5 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 18 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 90 W |
| Rds On (Max) @ Id, Vgs | 1.05 Ohm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD7 Series
MDmesh technology applies the benefits of the multiple drain process to STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics.
Documents
Technical documentation and resources
