
Discrete Semiconductor Products
MJE15029
ObsoleteON Semiconductor
8.0 A, 120 V PNP BIPOLAR POWER TRANSISTOR
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Discrete Semiconductor Products
MJE15029
ObsoleteON Semiconductor
8.0 A, 120 V PNP BIPOLAR POWER TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MJE15029 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Frequency - Transition | 30 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 50 W |
| Supplier Device Package | TO-220 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 120 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJE15033 Series
The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.
Documents
Technical documentation and resources