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TIP31AG
Discrete Semiconductor Products

MJE15029

Obsolete
ON Semiconductor

8.0 A, 120 V PNP BIPOLAR POWER TRANSISTOR

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TIP31AG
Discrete Semiconductor Products

MJE15029

Obsolete
ON Semiconductor

8.0 A, 120 V PNP BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationMJE15029
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20
Frequency - Transition30 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]50 W
Supplier Device PackageTO-220
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

MJE15033 Series

The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.