Discrete Semiconductor Products

MJE15032

Obsolete

BIPOLAR TRANSISTOR, NPN, 250 V, 8.0 A

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

BIPOLAR TRANSISTOR, NPN, 250 V, 8.0 A

Technical Specifications

Parameters and characteristics for this part

Specification	MJE15032

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 hFE
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	50 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	250 V

8.0 A, 120 V PNP Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor MJE15029	100 µA	Through Hole	PNP	120 V	8 A	TO-220-3	50 W	20	150 °C	-65 °C	500 mV	30 MHz	TO-220
ON Semiconductor MJE15032G	10 µA	Through Hole	NPN		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V
ON Semiconductor MJE15034	10 µA	Through Hole	NPN	350 V	4 A	TO-220-3	2 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE
ON Semiconductor MJE15035	10 µA	Through Hole	PNP	350 V	4 A	TO-220-3	2 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE
ON Semiconductor MJE15033	10 µA	Through Hole	PNP		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V
ON Semiconductor MJE15033G	10 µA	Through Hole	PNP		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V
ON Semiconductor MJE15035G	10 µA	Through Hole	PNP	350 V	4 A	TO-220-3	2 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE
ON Semiconductor MJE15032	10 µA	Through Hole	NPN		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.

Technical documentation and resources