MJE15033 Series

8.0 A, 120 V PNP Bipolar Power Transistor

Catalog

8.0 A, 120 V PNP Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor MJE15029	100 µA	Through Hole	PNP	120 V	8 A	TO-220-3	50 W	20	150 °C	-65 °C	500 mV	30 MHz	TO-220
ON Semiconductor MJE15032G	10 µA	Through Hole	NPN		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V
ON Semiconductor MJE15034	10 µA	Through Hole	NPN	350 V	4 A	TO-220-3	2 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE
ON Semiconductor MJE15035	10 µA	Through Hole	PNP	350 V	4 A	TO-220-3	2 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE
ON Semiconductor MJE15033	10 µA	Through Hole	PNP		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V
ON Semiconductor MJE15033G	10 µA	Through Hole	PNP		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V
ON Semiconductor MJE15035G	10 µA	Through Hole	PNP	350 V	4 A	TO-220-3	2 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE
ON Semiconductor MJE15032	10 µA	Through Hole	NPN		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V

8.0 A, 120 V PNP Bipolar Power Transistor

• DC Current Gain Specified to 4.0 AmpereshFE= 40 (Min) @ IC= 3.0 AdchFE= 20 (Min) @ IC= 4.0 Adc

• Collector-Emitter Sustaining Voltage -VCEO(sus)= 120 Vdc (Min) MJE15028, MJE15029VCEO(sus)= 150 Vdc (Min) - MJE15030, MJE15031

• High Current Gain - Bandwidth ProductfT= 30 MHz (Min) @ IC= 500 mAdc

• TO-220AB Compact Package

• Pb-Free Packages are Available

The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.