Specification	MJE15032G

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 hFE
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	50 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	250 V

MJE15033 Series

8.0 A, 120 V PNP Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor MJE15029	100 µA	Through Hole	PNP	120 V	8 A	TO-220-3	50 W	20	150 °C	-65 °C	500 mV	30 MHz	TO-220
ON Semiconductor MJE15032G	10 µA	Through Hole	NPN		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V
ON Semiconductor MJE15034	10 µA	Through Hole	NPN	350 V	4 A	TO-220-3	2 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE
ON Semiconductor MJE15035	10 µA	Through Hole	PNP	350 V	4 A	TO-220-3	2 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE
ON Semiconductor MJE15033	10 µA	Through Hole	PNP		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V
ON Semiconductor MJE15033G	10 µA	Through Hole	PNP		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V
ON Semiconductor MJE15035G	10 µA	Through Hole	PNP	350 V	4 A	TO-220-3	2 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE
ON Semiconductor MJE15032	10 µA	Through Hole	NPN		8 A	TO-220-3	50 W		150 °C	-65 °C	500 mV	30 MHz	TO-220	10 hFE	250 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.

Technical documentation and resources