Integrated Circuits (ICs)
MT53E128M32D2DS-046 AAT:A TR
ActiveMicron Technology Inc.
IC DRAM 4GBIT 2.133GHZ 200WFBGA
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Integrated Circuits (ICs)
MT53E128M32D2DS-046 AAT:A TR
ActiveMicron Technology Inc.
IC DRAM 4GBIT 2.133GHZ 200WFBGA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MT53E128M32D2DS-046 AAT:A TR |
|---|---|
| Clock Frequency | 2.133 GHz |
| Grade | Automotive |
| Memory Format | DRAM |
| Memory Organization | 128 M |
| Memory Size | 512 kb |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 105 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 200-WFBGA |
| Qualification | AEC-Q100 |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Technology | SDRAM - Mobile LPDDR4 |
| Voltage - Supply | 1.1 V |
MT53E128 Series
| Part | Mounting Type | Memory Organization | Technology | Voltage - Supply | Memory Size | Memory Format | Operating Temperature [Max] | Operating Temperature [Min] | Qualification | Grade | Supplier Device Package | Clock Frequency | Package / Case | Memory Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Interface | Supplier Device Package [y] | Supplier Device Package [x] | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | Surface Mount | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 512 kb | DRAM | 105 °C | -40 °C | AEC-Q100 | Automotive | 200-WFBGA (10x14.5) | 2.133 GHz | 200-WFBGA | Volatile | ||||||
 Micron Technology Inc. | Surface Mount | 128 M | SDRAM - Mobile LPDDR4 | 512 kb | DRAM | 105 °C | -40 °C | AEC-Q100 | Automotive | 200-TFBGA | 2.133 GHz | 200-TFBGA | Volatile | 1.06 V | 1.17 V | Parallel | 14.5 | 10 | 18 ns | |
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 2 Gbit | DRAM | 85 °C | -30 °C | 2.133 GHz | Volatile | |||||||||||
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 2 Gbit | DRAM | 95 °C | -40 °C | AEC-Q100 | Automotive | 1866 MHz | Volatile | |||||||||
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 2 Gbit | DRAM | 95 °C | -40 °C | AEC-Q100 | Automotive | 2.133 GHz | Volatile | |||||||||
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 2 Gbit | DRAM | 95 °C | -40 °C | AEC-Q100 | Automotive | 1866 MHz | Volatile | |||||||||
Micron Technology Inc. | Surface Mount | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 512 kb | DRAM | 105 °C | -40 °C | AEC-Q100 | Automotive | 200-WFBGA (10x14.5) | 2.133 GHz | 200-WFBGA | Volatile | ||||||
Micron Technology Inc. | Surface Mount | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 512 kb | DRAM | 95 °C | -40 °C | AEC-Q100 | Automotive | 200-WFBGA (10x14.5) | 1866 MHz | 200-WFBGA | Volatile | ||||||
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 2 Gbit | DRAM | Die | Die | ||||||||||||||
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 2 Gbit | DRAM | 85 °C | -30 °C | 2.133 GHz | Volatile |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 7.78 | |
Description
General part information
MT53E128 Series
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 2.133 GHz 200-WFBGA (10x14.5)
Documents
Technical documentation and resources
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