MT53E128 Series
Manufacturer: Micron Technology Inc.
IC DRAM 4GBIT 2.133GHZ 200WFBGA
| Part | Mounting Type | Memory Size | Memory Type | Clock Frequency | Qualification | Package / Case | Memory Format | Technology | Grade | Memory Organization | Voltage - Supply | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Memory Organization | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Interface | Access Time | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | Surface Mount | 512 kB | Volatile | 2.133 GHz | AEC-Q100 | 200-WFBGA | DRAM | SDRAM - Mobile LPDDR4 | Automotive | 128 M | 1.1 V | 200-WFBGA (10x14.5) | -40 °C | 105 °C | ||||||
Micron Technology Inc. | 2 Gbit | Volatile | 1866 MHz | AEC-Q100 | DRAM | SDRAM - Mobile LPDDR4 | Automotive | 1.1 V | -40 °C | 105 °C | 128M x 16 | |||||||||
Micron Technology Inc. | Surface Mount | 512 kB | Volatile | 2.133 GHz | AEC-Q100 | 200-TFBGA | DRAM | SDRAM - Mobile LPDDR4 | Automotive | 128 M | 200-TFBGA (10x14.5) | -40 °C | 105 °C | 1.06 V | 1.17 V | Parallel | 3.5 ns | 18 ns | ||
Micron Technology Inc. | 2 Gbit | Volatile | 2.133 GHz | DRAM | SDRAM - Mobile LPDDR4 | 1.1 V | -30 °C | 85 °C | 128M x 16 | |||||||||||
Micron Technology Inc. | 2 Gbit | Volatile | 1866 MHz | AEC-Q100 | DRAM | SDRAM - Mobile LPDDR4 | Automotive | 1.1 V | -40 °C | 95 °C | 128M x 16 | |||||||||
Micron Technology Inc. | 2 Gbit | Volatile | 2.133 GHz | AEC-Q100 | DRAM | SDRAM - Mobile LPDDR4 | Automotive | 1.1 V | -40 °C | 95 °C | 128M x 16 | |||||||||
Micron Technology Inc. | 2 Gbit | Volatile | 1866 MHz | AEC-Q100 | DRAM | SDRAM - Mobile LPDDR4 | Automotive | 1.1 V | -40 °C | 95 °C | 128M x 16 | |||||||||
Micron Technology Inc. | Surface Mount | 512 kB | Volatile | 2.133 GHz | AEC-Q100 | 200-WFBGA | DRAM | SDRAM - Mobile LPDDR4 | Automotive | 128 M | 1.1 V | 200-WFBGA (10x14.5) | -40 °C | 105 °C | ||||||
Micron Technology Inc. | Surface Mount | 512 kB | Volatile | 1866 MHz | AEC-Q100 | 200-WFBGA | DRAM | SDRAM - Mobile LPDDR4 | Automotive | 128 M | 1.1 V | 200-WFBGA (10x14.5) | -40 °C | 95 °C | ||||||
Micron Technology Inc. | 2 Gbit | Die | DRAM | SDRAM - Mobile LPDDR4 | Die | 128M x 16 |