Integrated Circuits (ICs)

MT53E128M32D2FW-046 AAT:A TR

Active

Micron Technology Inc.

LPDDR4 4G 128MX32 FBGA DDP

Deep-Dive with AI

Search across all available documentation for this part.

Integrated Circuits (ICs)

MT53E128M32D2FW-046 AAT:A TR

Active

Micron Technology Inc.

LPDDR4 4G 128MX32 FBGA DDP

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E128M32D2FW-046 AAT:A TR

Access Time	3.5 ns
Clock Frequency	2.133 GHz
Grade	Automotive
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	128 M
Memory Size	512 kB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	105 °C
Operating Temperature [Min]	-40 °C
Package / Case	200-TFBGA
Qualification	AEC-Q100
Supplier Device Package	200-TFBGA (10x14.5)
Technology	SDRAM - Mobile LPDDR4
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E128 Series

Part	Mounting Type	Memory Size	Memory Type	Clock Frequency	Qualification	Package / Case	Memory Format	Technology	Grade	Memory Organization	Voltage - Supply	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Memory Organization	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Interface	Access Time	Write Cycle Time - Word, Page
Micron Technology Inc. MT53E128M32D2DS-046 AAT:A	Surface Mount	512 kB	Volatile	2.133 GHz	AEC-Q100	200-WFBGA	DRAM	SDRAM - Mobile LPDDR4	Automotive	128 M	1.1 V	200-WFBGA (10x14.5)	-40 °C	105 °C
Micron Technology Inc. MT53E128M16D1DS-053 AAT:A		2 Gbit	Volatile	1866 MHz	AEC-Q100		DRAM	SDRAM - Mobile LPDDR4	Automotive		1.1 V		-40 °C	105 °C	128M x 16
Micron Technology Inc. MT53E128M32D2FW-046 AAT:A TR	Surface Mount	512 kB	Volatile	2.133 GHz	AEC-Q100	200-TFBGA	DRAM	SDRAM - Mobile LPDDR4	Automotive	128 M		200-TFBGA (10x14.5)	-40 °C	105 °C		1.06 V	1.17 V	Parallel	3.5 ns	18 ns
Micron Technology Inc. MT53E128M16D1DS-046 WT:A		2 Gbit	Volatile	2.133 GHz			DRAM	SDRAM - Mobile LPDDR4			1.1 V		-30 °C	85 °C	128M x 16
Micron Technology Inc. MT53E128M16D1DS-053 AIT:A TR		2 Gbit	Volatile	1866 MHz	AEC-Q100		DRAM	SDRAM - Mobile LPDDR4	Automotive		1.1 V		-40 °C	95 °C	128M x 16
Micron Technology Inc. MT53E128M16D1DS-046 AIT:A TR		2 Gbit	Volatile	2.133 GHz	AEC-Q100		DRAM	SDRAM - Mobile LPDDR4	Automotive		1.1 V		-40 °C	95 °C	128M x 16
Micron Technology Inc. MT53E128M16D1DS-053 AIT:A		2 Gbit	Volatile	1866 MHz	AEC-Q100		DRAM	SDRAM - Mobile LPDDR4	Automotive		1.1 V		-40 °C	95 °C	128M x 16
Micron Technology Inc. MT53E128M32D2DS-046 AAT:A TR	Surface Mount	512 kB	Volatile	2.133 GHz	AEC-Q100	200-WFBGA	DRAM	SDRAM - Mobile LPDDR4	Automotive	128 M	1.1 V	200-WFBGA (10x14.5)	-40 °C	105 °C
Micron Technology Inc. MT53E128M32D2DS-053 AIT:A TR	Surface Mount	512 kB	Volatile	1866 MHz	AEC-Q100	200-WFBGA	DRAM	SDRAM - Mobile LPDDR4	Automotive	128 M	1.1 V	200-WFBGA (10x14.5)	-40 °C	95 °C
Micron Technology Inc. MT53E128M16D1Z19MWC1		2 Gbit				Die	DRAM	SDRAM - Mobile LPDDR4				Die			128M x 16

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 8.77
	Tape & Reel (TR)	2000	$ 6.85

Description

General part information

MT53E128 Series

SDRAM - Mobile LPDDR4 Memory IC 4Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)

Documents

Technical documentation and resources

No documents available