Integrated Circuits (ICs)

MT53E128M16D1DS-053 AAT:A

Obsolete

Micron Technology Inc.

IC DRAM 2GBIT 1.866GHZ WFBGA

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Integrated Circuits (ICs)

MT53E128M16D1DS-053 AAT:A

Obsolete

Micron Technology Inc.

IC DRAM 2GBIT 1.866GHZ WFBGA

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E128M16D1DS-053 AAT:A

Clock Frequency	1866 MHz
Grade	Automotive
Memory Format	DRAM
Memory Organization	128M x 16
Memory Size	2 Gbit
Memory Type	Volatile
Operating Temperature [Max]	105 °C
Operating Temperature [Min]	-40 °C
Qualification	AEC-Q100
Technology	SDRAM - Mobile LPDDR4
Voltage - Supply	1.1 V

MT53E128 Series

Part	Mounting Type	Memory Size	Memory Type	Clock Frequency	Qualification	Package / Case	Memory Format	Technology	Grade	Memory Organization	Voltage - Supply	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Memory Organization	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Interface	Access Time	Write Cycle Time - Word, Page
Micron Technology Inc. MT53E128M32D2DS-046 AAT:A	Surface Mount	512 kB	Volatile	2.133 GHz	AEC-Q100	200-WFBGA	DRAM	SDRAM - Mobile LPDDR4	Automotive	128 M	1.1 V	200-WFBGA (10x14.5)	-40 °C	105 °C
Micron Technology Inc. MT53E128M16D1DS-053 AAT:A		2 Gbit	Volatile	1866 MHz	AEC-Q100		DRAM	SDRAM - Mobile LPDDR4	Automotive		1.1 V		-40 °C	105 °C	128M x 16
Micron Technology Inc. MT53E128M32D2FW-046 AAT:A TR	Surface Mount	512 kB	Volatile	2.133 GHz	AEC-Q100	200-TFBGA	DRAM	SDRAM - Mobile LPDDR4	Automotive	128 M		200-TFBGA (10x14.5)	-40 °C	105 °C		1.06 V	1.17 V	Parallel	3.5 ns	18 ns
Micron Technology Inc. MT53E128M16D1DS-046 WT:A		2 Gbit	Volatile	2.133 GHz			DRAM	SDRAM - Mobile LPDDR4			1.1 V		-30 °C	85 °C	128M x 16
Micron Technology Inc. MT53E128M16D1DS-053 AIT:A TR		2 Gbit	Volatile	1866 MHz	AEC-Q100		DRAM	SDRAM - Mobile LPDDR4	Automotive		1.1 V		-40 °C	95 °C	128M x 16
Micron Technology Inc. MT53E128M16D1DS-046 AIT:A TR		2 Gbit	Volatile	2.133 GHz	AEC-Q100		DRAM	SDRAM - Mobile LPDDR4	Automotive		1.1 V		-40 °C	95 °C	128M x 16
Micron Technology Inc. MT53E128M16D1DS-053 AIT:A		2 Gbit	Volatile	1866 MHz	AEC-Q100		DRAM	SDRAM - Mobile LPDDR4	Automotive		1.1 V		-40 °C	95 °C	128M x 16
Micron Technology Inc. MT53E128M32D2DS-046 AAT:A TR	Surface Mount	512 kB	Volatile	2.133 GHz	AEC-Q100	200-WFBGA	DRAM	SDRAM - Mobile LPDDR4	Automotive	128 M	1.1 V	200-WFBGA (10x14.5)	-40 °C	105 °C
Micron Technology Inc. MT53E128M32D2DS-053 AIT:A TR	Surface Mount	512 kB	Volatile	1866 MHz	AEC-Q100	200-WFBGA	DRAM	SDRAM - Mobile LPDDR4	Automotive	128 M	1.1 V	200-WFBGA (10x14.5)	-40 °C	95 °C
Micron Technology Inc. MT53E128M16D1Z19MWC1		2 Gbit				Die	DRAM	SDRAM - Mobile LPDDR4				Die			128M x 16

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

MT53E128 Series

SDRAM - Mobile LPDDR4 Memory IC 2Gbit 1.866 GHz

Documents

Technical documentation and resources

No documents available