Discrete Semiconductor Products
STGF15H60DF
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 15 A HIGH SPEED
Discrete Semiconductor Products
STGF15H60DF
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 15 A HIGH SPEED
Technical Specifications
Parameters and characteristics for this part
| Specification | STGF15H60DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Gate Charge | 81 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power - Max [Max] | 30 W |
| Reverse Recovery Time (trr) | 103 ns |
| Supplier Device Package | TO-220FP |
| Switching Energy | 207 µJ, 136 µJ |
| Td (on/off) @ 25°C | 24.5 ns, 118 ns |
| Test Condition | 400 V, 15 V, 10 Ohm, 15 A |
| Vce(on) (Max) @ Vge, Ic [Max] | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGF15 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.