STGF15 Series

Trench gate field-stop IGBT M series, 650 V 15 A low loss

Catalog

Trench gate field-stop IGBT M series, 650 V 15 A low loss

Part	Power - Max [Max]	Current - Collector Pulsed (Icm)	Gate Charge	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Mounting Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Td (on/off) @ 25°C	Switching Energy	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic [Max]
STMicroelectronics STGF15M65DF2	31 W	60 A	45 nC	175 °C	-55 °C	Trench Field Stop	Through Hole	30 A	650 V	12 Ohm 15 A 15 V 400 V	24 ns 93 ns	90 µJ 450 µJ	TO-220-3 Full Pack	TO-220FP	142 ns	2 V
STMicroelectronics STGF15H60DF	30 W	60 A	81 nC	175 °C	-55 °C	Trench Field Stop	Through Hole	30 A	600 V	10 Ohm 15 V 15 A 400 V	24.5 ns 118 ns	136 µJ 207 µJ	TO-220-3 Full Pack	TO-220FP	103 ns	2 V

Catalog

Trench gate field-stop IGBT M series, 650 V 15 A low loss

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.