Discrete Semiconductor Products
STGF15M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 15 A LOW LOSS
Discrete Semiconductor Products
STGF15M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 15 A LOW LOSS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGF15M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Gate Charge | 45 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power - Max [Max] | 31 W |
| Reverse Recovery Time (trr) | 142 ns |
| Supplier Device Package | TO-220FP |
| Switching Energy | 450 µJ, 90 µJ |
| Td (on/off) @ 25°C | 93 ns, 24 ns |
| Test Condition | 12 Ohm, 15 A, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1952 | $ 1.05 | |
| Tube | 1 | $ 1.64 | ||
| 10 | $ 1.05 | |||
| 100 | $ 0.72 | |||
| 500 | $ 0.64 | |||
Description
General part information
STGF15 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.