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Discrete Semiconductor Products
MSCSM70AM07T3AG
ActiveMicrochip Technology
700V, 5 MOHM, SP3F, PHASE LEG MSIC™ MOSFET MODULE
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Discrete Semiconductor Products
MSCSM70AM07T3AG
ActiveMicrochip Technology
700V, 5 MOHM, SP3F, PHASE LEG MSIC™ MOSFET MODULE
Technical Specifications
Parameters and characteristics for this part
| Specification | MSCSM70AM07T3AG |
|---|---|
| Configuration | 2 N Channel |
| Current - Continuous Drain (Id) @ 25°C | 353 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13500 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Module |
| Power - Max [Max] | 988 W |
| Rds On (Max) @ Id, Vgs | 6.4 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 2.4 V |
MSCSM70AM025T6LIAG-Module Series
700V, 7.5 mOhm, SP6P, Triple Vienna Rectifier mSiC™ MOSFET Module
| Part | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Configuration | Drain to Source Voltage (Vdss) | Power - Max [Max] | Mounting Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | 2.4 V | 3.2 mOhm | 1290 nC | 689 A | -40 C | 175 °C | Silicon Carbide (SiC) | 2 N Channel | 700 V | 1882 W | Chassis Mount | Module | 27000 pF | |||||
Microchip Technology | 2.4 V | 6.4 mOhm | 353 A | -40 C | 175 °C | Silicon Carbide (SiC) | 2 N Channel | 700 V | 988 W | Chassis Mount | Module | 13500 pF | ||||||
 Microchip Technology | 19 mOhm | 124 A | -40 C | 175 °C | Silicon Carbide (SiC) | 2 N Channel | 700 V | 365 W | Chassis Mount | Module | 2.4 V | 4500 pF | 215 nC | SP3F | ||||
Microchip Technology | 2.4 V | 3.2 mOhm | 1290 nC | 689 A | -40 C | 175 °C | Silicon Carbide (SiC) | 2 N Channel | 700 V | 1882 W | Chassis Mount | Module | 27000 pF | |||||
Microchip Technology | 19 mOhm | 124 A | -40 C | 175 °C | Silicon Carbide (SiC) | 2 N Channel | 700 V | 365 W | Chassis Mount | Module | 2.4 V | 4500 pF | 215 nC | |||||
 Microchip Technology | 2.4 V | 6.4 mOhm | 349 A | -40 C | 175 °C | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | 700 V | 966 W | Chassis Mount | Module | 13500 pF | SP6C | |||||
Microchip Technology | ||||||||||||||||||
 Microchip Technology | 19 mOhm | 124 A | -40 C | 175 °C | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | 700 V | 365 W | Chassis Mount | Module | 2.4 V | 4500 pF | 215 nC | SP3F | ||||
Microchip Technology | 2.4 V | 3.2 mOhm | 1290 nC | 689 A | -40 C | 175 °C | Silicon Carbide (SiC) | 2 N Channel | 700 V | 1882 W | Chassis Mount | Module | 27000 pF | |||||
Microchip Technology | 2.4 V | 860 nC | 464 A | -40 C | 175 °C | Silicon Carbide (SiC) | 700 V | 1277 W | Chassis Mount | Module | 18000 pF | 4 N-Channel |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 283.38 | |
| Microchip Direct | N/A | 1 | $ 283.38 | |
| 50 | $ 234.80 | |||
| 100 | $ 210.51 | |||
| 250 | $ 202.42 | |||
| 500 | $ 178.12 | |||
| 1000 | $ 161.93 | |||
| 5000 | $ 142.50 | |||
| Newark | Each | 1 | $ 283.38 | |
| 5 | $ 194.32 | |||
| 50 | $ 187.84 | |||
| 100 | $ 181.36 | |||
| 250 | $ 181.36 | |||
| 500 | $ 181.36 | |||
Description
General part information
MSCSM70AM025T6LIAG-Module Series
* SiC Power MOSFET
* Low RDS(on)
* High temperature performance