MSCSM70HM038AG

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Microchip Technology

700V, 3.8 MOHM, SP6C, FULL BRIDGE MSIC™ MOSFET MODULE

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DocumentsDriving mSiC™ MOSFETs MSCSM70HM038AG Full Bridge SiC Power Module

Discrete Semiconductor Products

MSCSM70HM038AG

Active

Microchip Technology

700V, 3.8 MOHM, SP6C, FULL BRIDGE MSIC™ MOSFET MODULE

Deep-Dive with AI

DocumentsDriving mSiC™ MOSFETs MSCSM70HM038AG Full Bridge SiC Power Module

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MSCSM70HM038AG

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	464 A
Drain to Source Voltage (Vdss)	700 V
Gate Charge (Qg) (Max) @ Vgs [Max]	860 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	18000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	1277 W
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	2.4 V

MSCSM70AM025T6LIAG-Module Series

700V, 7.5 mOhm, SP6P, Triple Vienna Rectifier mSiC™ MOSFET Module

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Configuration	Drain to Source Voltage (Vdss)	Power - Max [Max]	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Configuration
Microchip Technology MSCSM70AM025T6AG	2.4 V	3.2 mOhm	1290 nC	689 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	1882 W	Chassis Mount	Module	27000 pF
Microchip Technology MSCSM70AM07T3AG	2.4 V	6.4 mOhm		353 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	988 W	Chassis Mount	Module	13500 pF
Microchip Technology MSCSM70VM19C3AG		19 mOhm		124 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	365 W	Chassis Mount	Module		2.4 V	4500 pF	215 nC	SP3F
Microchip Technology MSCSM70AM025D3AG	2.4 V	3.2 mOhm	1290 nC	689 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	1882 W	Chassis Mount	Module	27000 pF
Microchip Technology MSCSM70VR1M19C1AG		19 mOhm		124 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	365 W	Chassis Mount	Module		2.4 V	4500 pF	215 nC
Microchip Technology MSCSM70TLM07CAG	2.4 V	6.4 mOhm		349 A	-40 C	175 °C	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	700 V	966 W	Chassis Mount	Module	13500 pF				SP6C
Microchip Technology MSCSM70HM038CAG
Microchip Technology MSCSM70TLM19C3AG		19 mOhm		124 A	-40 C	175 °C	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	700 V	365 W	Chassis Mount	Module		2.4 V	4500 pF	215 nC	SP3F
Microchip Technology MSCSM70AM025T6LIAG	2.4 V	3.2 mOhm	1290 nC	689 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	1882 W	Chassis Mount	Module	27000 pF
Microchip Technology MSCSM70HM038AG	2.4 V		860 nC	464 A	-40 C	175 °C	Silicon Carbide (SiC)		700 V	1277 W	Chassis Mount	Module			18000 pF			4 N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 782.45
Microchip Direct	N/A	1	$ 782.45
		50	$ 648.32
		100	$ 581.26
		250	$ 558.90
		500	$ 491.83
		1000	$ 447.12
		5000	$ 393.46
Newark	Each	1	$ 782.46
		5	$ 536.54
		50	$ 518.66
		100	$ 500.77
		250	$ 500.77
		500	$ 500.77

Description

General part information

MSCSM70AM025T6LIAG-Module Series

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance

Documents

Technical documentation and resources

Driving mSiC™ MOSFETs

Application Notes

MSCSM70HM038AG Full Bridge SiC Power Module

Data Sheets