MSCSM70VR1M19C1AG

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Microchip Technology

700V, 15 MOHM, SP1F, VIENNA RECTIFIER MSIC™ MOSFET MODULE

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DocumentsDatasheet Driving mSiC™ MOSFETs +1

Discrete Semiconductor Products

MSCSM70VR1M19C1AG

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Microchip Technology

700V, 15 MOHM, SP1F, VIENNA RECTIFIER MSIC™ MOSFET MODULE

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DocumentsDatasheet Driving mSiC™ MOSFETs +1

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Technical Specifications

Parameters and characteristics for this part

Specification	MSCSM70VR1M19C1AG

Configuration	2 N Channel
Current - Continuous Drain (Id) @ 25°C	124 A
Drain to Source Voltage (Vdss)	700 V
Gate Charge (Qg) (Max) @ Vgs	215 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4500 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	365 W
Rds On (Max) @ Id, Vgs	19 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id [Max]	2.4 V

MSCSM70AM025T6LIAG-Module Series

700V, 7.5 mOhm, SP6P, Triple Vienna Rectifier mSiC™ MOSFET Module

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Configuration	Drain to Source Voltage (Vdss)	Power - Max [Max]	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Configuration
Microchip Technology MSCSM70AM025T6AG	2.4 V	3.2 mOhm	1290 nC	689 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	1882 W	Chassis Mount	Module	27000 pF
Microchip Technology MSCSM70AM07T3AG	2.4 V	6.4 mOhm		353 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	988 W	Chassis Mount	Module	13500 pF
Microchip Technology MSCSM70VM19C3AG		19 mOhm		124 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	365 W	Chassis Mount	Module		2.4 V	4500 pF	215 nC	SP3F
Microchip Technology MSCSM70AM025D3AG	2.4 V	3.2 mOhm	1290 nC	689 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	1882 W	Chassis Mount	Module	27000 pF
Microchip Technology MSCSM70VR1M19C1AG		19 mOhm		124 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	365 W	Chassis Mount	Module		2.4 V	4500 pF	215 nC
Microchip Technology MSCSM70TLM07CAG	2.4 V	6.4 mOhm		349 A	-40 C	175 °C	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	700 V	966 W	Chassis Mount	Module	13500 pF				SP6C
Microchip Technology MSCSM70HM038CAG
Microchip Technology MSCSM70TLM19C3AG		19 mOhm		124 A	-40 C	175 °C	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	700 V	365 W	Chassis Mount	Module		2.4 V	4500 pF	215 nC	SP3F
Microchip Technology MSCSM70AM025T6LIAG	2.4 V	3.2 mOhm	1290 nC	689 A	-40 C	175 °C	Silicon Carbide (SiC)	2 N Channel	700 V	1882 W	Chassis Mount	Module	27000 pF
Microchip Technology MSCSM70HM038AG	2.4 V		860 nC	464 A	-40 C	175 °C	Silicon Carbide (SiC)		700 V	1277 W	Chassis Mount	Module			18000 pF			4 N-Channel