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TO-220F
Discrete Semiconductor Products

FCPF20N60

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, EASY DRIVE, 600 V, 20 A, 190 MΩ, TO-220F

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Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+2
TO-220F
Discrete Semiconductor Products

FCPF20N60

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, EASY DRIVE, 600 V, 20 A, 190 MΩ, TO-220F

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+2

Technical Specifications

Parameters and characteristics for this part

SpecificationFCPF20N60
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs98 nC
Input Capacitance (Ciss) (Max) @ Vds3080 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)39 W
Rds On (Max) @ Id, Vgs190 mOhm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.27
50$ 4.17
100$ 3.58
500$ 3.18
1000$ 2.72
2000$ 2.56
NewarkEach 500$ 2.66
ON SemiconductorN/A 1$ 2.62

Description

General part information

FCPF20N60 Series

SuperFET®MOSFET is ON Semiconductor Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.