Discrete Semiconductor Products

FCPF20N60T

Active

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET®, EASY DRIVE, 600 V, 20 A, 190 MΩ, TO-220F

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Datasheet +1

Discrete Semiconductor Products

FCPF20N60T

Active

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET®, EASY DRIVE, 600 V, 20 A, 190 MΩ, TO-220F

Deep-Dive with AI

DocumentsDatasheet Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FCPF20N60T

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	98 nC
Input Capacitance (Ciss) (Max) @ Vds	3080 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	39 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FCPF20N60 Series

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)
ON Semiconductor FCPF20N60TYDTU	MOSFET (Metal Oxide)	10 V	5 V	Through Hole	39 W	190 mOhm	3080 pF	TO-220-3 Full Pack Formed Leads	600 V	TO-220F-3	20 A	-55 °C	150 °C	N-Channel	98 nC	30 V
ON Semiconductor FCPF20N60T	MOSFET (Metal Oxide)	10 V	5 V	Through Hole	39 W	190 mOhm	3080 pF	TO-220-3 Full Pack	600 V	TO-220F-3	20 A	-55 °C	150 °C	N-Channel	98 nC	30 V
ON Semiconductor FCPF20N60	MOSFET (Metal Oxide)	10 V	5 V	Through Hole	39 W	190 mOhm	3080 pF	TO-220-3 Full Pack	600 V	TO-220F-3	20 A	-55 °C	150 °C	N-Channel	98 nC	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	250	$ 2.72
Newark	Each	500	$ 2.63

Description

General part information

FCPF20N60 Series

SuperFET®MOSFET is ON Semiconductor Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

FCPF20N60T

Deep-Dive with AI

FCPF20N60T

Deep-Dive with AI

Technical Specifications

FCPF20N60 Series

Pricing

Description

FCPF20N60 Series

Documents

Datasheet

Datasheet

Package Drawing-221AT-TO-220 Fullpack, 3-Lead / TO-220F-3FG

FCPF20N60 Series