FCPF20N60 Series

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)
ON Semiconductor FCPF20N60TYDTU	MOSFET (Metal Oxide)	10 V	5 V	Through Hole	39 W	190 mOhm	3080 pF	TO-220-3 Full Pack Formed Leads	600 V	TO-220F-3	20 A	-55 °C	150 °C	N-Channel	98 nC	30 V
ON Semiconductor FCPF20N60T	MOSFET (Metal Oxide)	10 V	5 V	Through Hole	39 W	190 mOhm	3080 pF	TO-220-3 Full Pack	600 V	TO-220F-3	20 A	-55 °C	150 °C	N-Channel	98 nC	30 V
ON Semiconductor FCPF20N60	MOSFET (Metal Oxide)	10 V	5 V	Through Hole	39 W	190 mOhm	3080 pF	TO-220-3 Full Pack	600 V	TO-220F-3	20 A	-55 °C	150 °C	N-Channel	98 nC	30 V

Catalog

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F

Key Features

• 650V @ TJ= 150°C

• Typ. RDS(on)= 150 mΩ

• Ultra Low Gate Charge (Typ. Qg= 75 nC )

• Low Effective Output Capacitance (Typ. Coss(eff.)= 165 pF )

• 100% Avalanche Tested

Description

SuperFET®MOSFET is ON Semiconductor Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.