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TO-220F-3 (Y-Forming)
Discrete Semiconductor Products

FCPF20N60TYDTU

Obsolete
ON Semiconductor

MOSFET N-CH 600V 20A TO220F-3

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TO-220F-3 (Y-Forming)
Discrete Semiconductor Products

FCPF20N60TYDTU

Obsolete
ON Semiconductor

MOSFET N-CH 600V 20A TO220F-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFCPF20N60TYDTU
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs98 nC
Input Capacitance (Ciss) (Max) @ Vds3080 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack, Formed Leads
Power Dissipation (Max)39 W
Rds On (Max) @ Id, Vgs190 mOhm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FCPF20N60 Series

SuperFET®MOSFET is ON Semiconductor Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Documents

Technical documentation and resources