LP0701LG-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -16.5V, 1.5 OHM 8 SOIC 3.90MM(.150IN) T/R ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
LP0701LG-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -16.5V, 1.5 OHM 8 SOIC 3.90MM(.150IN) T/R ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | LP0701LG-G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 700 mA |
| Drain to Source Voltage (Vdss) | 16.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) [Max] | 1.5 W |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.59 | |
| Digi-Reel® | 1 | $ 2.59 | ||
| Tape & Reel (TR) | 3300 | $ 1.94 | ||
| Microchip Direct | T/R | 1 | $ 2.59 | |
| 25 | $ 2.15 | |||
| 100 | $ 1.94 | |||
| 1000 | $ 1.62 | |||
| 5000 | $ 1.51 | |||
| 10000 | $ 1.38 | |||
| Newark | Each (Supplied on Full Reel) | 3300 | $ 2.00 | |
| TME | N/A | 1 | $ 2.39 | |
| 3 | $ 2.13 | |||
| 10 | $ 2.02 | |||
| 100 | $ 1.85 | |||
Description
General part information
LP0701N3 Series
These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. The low threshold voltage and low on-resistance characteristics are ideally suited for hand held, battery operated applications.
Documents
Technical documentation and resources
