LP0701N3 Series

P-Channel Enhancement-Mode LATERAL MOSFET

Catalog

P-Channel Enhancement-Mode LATERAL MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case [y]	Package / Case [x]	Power Dissipation (Max) [Max]
Microchip Technology LP0701N3-G	2 V	5 V	P-Channel	TO-226-3 TO-92-3	MOSFET (Metal Oxide)	500 mA	TO-92	250 pF	16.5 V	Through Hole	10 V	1 W	-55 °C	150 °C	1 V	1.5 Ohm
Microchip Technology LP0701LG-G	2 V	5 V	P-Channel	8-SOIC	MOSFET (Metal Oxide)	700 mA	8-SOIC	250 pF	16.5 V	Surface Mount	10 V		-55 °C	150 °C	1 V	1.5 Ohm	3.9 mm	0.154 in	1.5 W

Catalog

P-Channel Enhancement-Mode LATERAL MOSFET

Key Features

• + Ultra-low threshold

• + High input impedance

• + Low input capacitance

• + Fast switching speeds

• + Low on-resistance

• + Freedom from secondary breakdown

• + Low input and output leakage

Description

These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. The low threshold voltage and low on-resistance characteristics are ideally suited for hand held, battery operated applications.