Specification	LP0701N3-G

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	16.5 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

LP0701N3 Series

P-Channel Enhancement-Mode LATERAL MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case [y]	Package / Case [x]	Power Dissipation (Max) [Max]
Microchip Technology LP0701N3-G	2 V	5 V	P-Channel	TO-226-3 TO-92-3	MOSFET (Metal Oxide)	500 mA	TO-92	250 pF	16.5 V	Through Hole	10 V	1 W	-55 °C	150 °C	1 V	1.5 Ohm
Microchip Technology LP0701LG-G	2 V	5 V	P-Channel	8-SOIC	MOSFET (Metal Oxide)	700 mA	8-SOIC	250 pF	16.5 V	Surface Mount	10 V		-55 °C	150 °C	1 V	1.5 Ohm	3.9 mm	0.154 in	1.5 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bag	1	$ 1.96
		25	$ 1.63
		100	$ 1.50
Microchip Direct	BAG	1	$ 1.96
		25	$ 1.63
		100	$ 1.50
		1000	$ 1.26
		5000	$ 1.14

Description

General part information

LP0701N3 Series

These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. The low threshold voltage and low on-resistance characteristics are ideally suited for hand held, battery operated applications.