Discrete Semiconductor Products

STB12NK80ZT4

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STMicroelectronics

N-CHANNEL 800 V, 0.65 OHM, 10.5 A ZENER PROTECTED SUPERMESH(TM) POWER MOSFET IN D2PAK PACKAGE

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DocumentsProduct Change Notice EN AN4250 +14

Discrete Semiconductor Products

STB12NK80ZT4

Active

STMicroelectronics

N-CHANNEL 800 V, 0.65 OHM, 10.5 A ZENER PROTECTED SUPERMESH(TM) POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice EN AN4250 +14

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB12NK80ZT4

Current - Continuous Drain (Id) @ 25°C	10.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds	2620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STB12NK80Z Series

N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in D2PAK package

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Package / Case	Operating Temperature	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
STMicroelectronics STB12NM50N	380 mOhm	500 V	Surface Mount	10 V	D2PAK	11 A	25 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	4 V	MOSFET (Metal Oxide)	100 W	940 pF	30 nC
STMicroelectronics STB12NK80ZT4	750 mOhm	800 V	Surface Mount	10 V	D2PAK	10.5 A	30 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		4.5 V	MOSFET (Metal Oxide)	190 W	2620 pF		87 nC	-55 °C	150 °C
STMicroelectronics STB12NM60N-1	410 mOhm	600 V	Through Hole	10 V	I2PAK	10 A	25 V	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA		4 V	MOSFET (Metal Oxide)		960 pF		30.5 nC	-55 °C	150 °C	90 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.93
		10	$ 4.14
		100	$ 3.35
		500	$ 2.98
	Digi-Reel®	1	$ 4.93
		10	$ 4.14
		100	$ 3.35
		500	$ 2.98
	Tape & Reel (TR)	1000	$ 2.55
		2000	$ 2.40
Newark	Each (Supplied on Cut Tape)	1	$ 5.68
		10	$ 4.19
		25	$ 3.92
		50	$ 3.64
		100	$ 3.37
		250	$ 3.23
		500	$ 2.92
		1000	$ 2.73

Description

General part information

STB12NK80Z Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.