STB12NK80ZT4
ActiveN-CHANNEL 800 V, 0.65 OHM, 10.5 A ZENER PROTECTED SUPERMESH(TM) POWER MOSFET IN D2PAK PACKAGE
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STB12NK80ZT4
ActiveN-CHANNEL 800 V, 0.65 OHM, 10.5 A ZENER PROTECTED SUPERMESH(TM) POWER MOSFET IN D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB12NK80ZT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.5 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 87 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2620 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) @ Id, Vgs | 750 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB12N Series
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Documents
Technical documentation and resources
