STB12N Series

N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in D2PAK package

Catalog

N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in D2PAK package

Part	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STB12NM50N	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	380 mOhm	N-Channel	940 pF	100 W	Surface Mount	11 A	25 V	10 V	150 °C	500 V	D2PAK	MOSFET (Metal Oxide)	30 nC
STMicroelectronics STB12NK80ZT4	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	750 mOhm	N-Channel		190 W	Surface Mount	10.5 A	30 V	10 V		800 V	D2PAK	MOSFET (Metal Oxide)		87 nC	2620 pF	150 °C	-55 °C
STMicroelectronics STB12NM60N-1	4 V	I2PAK TO-262-3 Long Leads TO-262AA	410 mOhm	N-Channel		90 W	Through Hole	10 A	25 V	10 V		600 V	I2PAK	MOSFET (Metal Oxide)	30.5 nC		960 pF	150 °C	-55 °C
STMicroelectronics STB12NM50T4	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	350 mOhm	N-Channel	1000 pF		Surface Mount	12 A	30 V	10 V		550 V	D2PAK	MOSFET (Metal Oxide)	39 nC			150 °C	-65 °C

Catalog

N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in D2PAK package

Description

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.