Specification	STB12NM50T4

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Rds On (Max) @ Id, Vgs	350 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STB12N Series

N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in D2PAK package

Part	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STB12NM50N	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	380 mOhm	N-Channel	940 pF	100 W	Surface Mount	11 A	25 V	10 V	150 °C	500 V	D2PAK	MOSFET (Metal Oxide)	30 nC
STMicroelectronics STB12NK80ZT4	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	750 mOhm	N-Channel		190 W	Surface Mount	10.5 A	30 V	10 V		800 V	D2PAK	MOSFET (Metal Oxide)		87 nC	2620 pF	150 °C	-55 °C
STMicroelectronics STB12NM60N-1	4 V	I2PAK TO-262-3 Long Leads TO-262AA	410 mOhm	N-Channel		90 W	Through Hole	10 A	25 V	10 V		600 V	I2PAK	MOSFET (Metal Oxide)	30.5 nC		960 pF	150 °C	-55 °C
STMicroelectronics STB12NM50T4	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	350 mOhm	N-Channel	1000 pF		Surface Mount	12 A	30 V	10 V		550 V	D2PAK	MOSFET (Metal Oxide)	39 nC			150 °C	-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.45
		10	$ 3.74
		100	$ 3.02
		500	$ 2.69
	Digi-Reel®	1	$ 4.45
		10	$ 3.74
		100	$ 3.02
		500	$ 2.69
	N/A	0	$ 5.50
	Tape & Reel (TR)	1000	$ 2.08
Newark	Each (Supplied on Cut Tape)	1	$ 6.14
		10	$ 4.32
		25	$ 4.03
		50	$ 3.75
		100	$ 3.47
		250	$ 3.25
		500	$ 3.03

Description

General part information

STB12N Series

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Documents

Technical documentation and resources

STB12NM50T4

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Technical Specifications

STB12N Series

Pricing

Description

STB12N Series

Documents

Technical Data Sheet EN

Technical Data Sheet EN

Product Change Notice EN

Datasheet

STB12N Series