APTM50HM75FT3G

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Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 46A I(D), 500V, 0.09OHM, 4-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

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Discrete Semiconductor Products

APTM50HM75FT3G

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Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 46A I(D), 500V, 0.09OHM, 4-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	APTM50HM75FT3G

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	46 A
Drain to Source Voltage (Vdss)	500 V
Gate Charge (Qg) (Max) @ Vgs [Max]	123 nC
Input Capacitance (Ciss) (Max) @ Vds	5600 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP3
Power - Max [Max]	357 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	SP3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5 V

APTM50HM65FT3G-Module Series

500V/Single switch + series and parallel diode/Si MOSFET

Part	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]
Microchip Technology APTM50SKM17G	1250 W	150 °C	-40 °C	N-Channel	180 A	30 V	500 V	560 nC	MOSFET (Metal Oxide)	20 mOhm	SP6	5 V	SP6	10 V	Chassis Mount	28000 pF
Microchip Technology APTM50UM09FAG		150 °C	-40 °C	N-Channel	497 A	30 V	500 V	1200 nC	MOSFET (Metal Oxide)	10 mOhm	SP6	5 V	SP6	10 V	Chassis Mount	63300 pF	5000 W
Microchip Technology APTM50DDA10T3G		150 °C	-40 °C		37 A		500 V		MOSFET (Metal Oxide)	120 mOhm	SP3		SP3		Chassis Mount			4367 pF	2 N-Channel (Dual)	312 W
Microchip Technology APTM50DAM17G	1250 W	150 °C	-40 °C	N-Channel	180 A	30 V	500 V	560 nC	MOSFET (Metal Oxide)	20 mOhm	SP6	5 V	SP6	10 V	Chassis Mount	28000 pF
Microchip Technology APTM50HM65FT3G		150 °C	-40 °C		51 A		500 V	140 nC	MOSFET (Metal Oxide)	78 mOhm	SP3	5 V	SP3		Chassis Mount			7000 pF		390 W	4 N-Channel
Microchip Technology APTM50AM19FG		150 °C	-40 °C		163 A		500 V	492 nC	MOSFET (Metal Oxide)	22.5 mOhm	SP6	5 V	SP6		Chassis Mount	22400 pF			2 N-Channel (Half Bridge)	1136 W
Microchip Technology APTM50DAM19G	1136 W	150 °C	-40 °C	N-Channel	163 A	30 V	500 V	492 nC	MOSFET (Metal Oxide)	22.5 mOhm	SP6	5 V	SP6	10 V	Chassis Mount	22400 pF
Microchip Technology APTM50AM24SCG		150 °C	-40 °C		150 A		500 V		Silicon Carbide (SiC)	28 mOhm	SP6	5 V	SP6		Chassis Mount	19600 pF			2 N-Channel (Half Bridge)	1250 W		434 nC
Microchip Technology APTM50HM75FT3G		150 °C	-40 °C		46 A		500 V		MOSFET (Metal Oxide)	90 mOhm	SP3	5 V	SP3		Chassis Mount	5600 pF				357 W	4 N-Channel	123 nC
Microchip Technology APTM50HM65FTG		150 °C	-40 °C		51 A		500 V	140 nC	MOSFET (Metal Oxide)	78 mOhm	SP4	5 V	SP4		Chassis Mount			7000 pF		390 W	4 N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	9	$ 135.50
		100	$ 96.79

Description

General part information

APTM50HM65FT3G-Module Series

* FREDFETs

* Low RDSon

* Low input and Miller capacitance

Documents

Technical documentation and resources