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APTM50UM09FAG
Discrete Semiconductor Products

APTM50UM09FAG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 497A I(D), 500V, 0.01OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

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APTM50UM09FAG
Discrete Semiconductor Products

APTM50UM09FAG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 497A I(D), 500V, 0.01OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTM50UM09FAG
Current - Continuous Drain (Id) @ 25°C497 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1200 nC
Input Capacitance (Ciss) (Max) @ Vds63300 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP6
Power Dissipation (Max) [Max]5000 W
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device PackageSP6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 3$ 451.18
Microchip DirectN/A 1$ 451.18
50$ 373.84
100$ 335.17
250$ 322.27
500$ 283.60
1000$ 257.82
5000$ 226.88

Description

General part information

APTM50HM65FT3G-Module Series

* FREDFETs

* Low RDSon

* Low input and Miller capacitance