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Thyristor TRIAC 4A = 5 mA 125 °C (Max) 600 V TO-220FPAB
Discrete Semiconductor Products

STF8N90K5

Active
STMicroelectronics

N-CHANNEL 900 V, 0.60 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A TO-220FP PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheet+14
Thyristor TRIAC 4A = 5 mA 125 °C (Max) 600 V TO-220FPAB
Discrete Semiconductor Products

STF8N90K5

Active
STMicroelectronics

N-CHANNEL 900 V, 0.60 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

DocumentsDatasheet+14

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF8N90K5
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)130 W
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 3.93
Tube 1$ 3.93
50$ 2.00
100$ 1.81
500$ 1.48
1000$ 1.38
2000$ 1.32
MouserN/A 1$ 3.93
10$ 3.64
25$ 1.93
100$ 1.76
500$ 1.47
1000$ 1.37
2000$ 1.32

Description

General part information

STF8 Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.