Discrete Semiconductor Products

STF8NK100Z

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STMicroelectronics

N-CHANNEL 1000 V, 1.60 OHM TYP., 6.5 A SUPERMESH POWER MOSFET IN A TO-220FP PACKAGE

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Discrete Semiconductor Products

STF8NK100Z

Active

STMicroelectronics

N-CHANNEL 1000 V, 1.60 OHM TYP., 6.5 A SUPERMESH POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF8NK100Z

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	102 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	1.85 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STF8 Series

N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature
STMicroelectronics STF8N60DM2	600 mOhm	8 A	25 W	5 V	25 V	13.5 nC	449 pF	TO-220-3 Full Pack	10 V	MOSFET (Metal Oxide)	TO-220FPAB	Through Hole	N-Channel	600 V	150 °C	-55 °C
STMicroelectronics STF8NM50N	790 mOhm	5 A	20 W	4 V	25 V			TO-220-3 Full Pack	10 V	MOSFET (Metal Oxide)	TO-220FP	Through Hole	N-Channel	500 V	150 °C	-55 °C	14 nC	364 pF
STMicroelectronics STF8N65M5	600 mOhm	7 A	25 W	5 V	25 V		690 pF	TO-220-3 Full Pack	10 V	MOSFET (Metal Oxide)	TO-220FP	Through Hole	N-Channel	650 V			15 nC		150 °C
STMicroelectronics STF8NK100Z	1.85 Ohm	6.5 A	40 W	4.5 V	30 V			TO-220-3 Full Pack	10 V	MOSFET (Metal Oxide)	TO-220FP	Through Hole	N-Channel	1000 V	150 °C	-55 °C	102 nC	2180 pF
STMicroelectronics STF8N90K5		8 A	130 W	5 V	30 V			TO-220-3 Full Pack	10 V	MOSFET (Metal Oxide)	TO-220FP	Through Hole	N-Channel	900 V	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1067	$ 5.66
	Tube	1	$ 4.76
		50	$ 3.77
		100	$ 3.23
		500	$ 2.87
		1000	$ 2.46
		2000	$ 2.32
Newark	Each	1	$ 5.60
		10	$ 4.74
		100	$ 3.38
		500	$ 2.92
		1000	$ 2.82

Description

General part information

STF8 Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.