STF8 Series

N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package

Catalog

N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature
STMicroelectronics STF8N60DM2	600 mOhm	8 A	25 W	5 V	25 V	13.5 nC	449 pF	TO-220-3 Full Pack	10 V	MOSFET (Metal Oxide)	TO-220FPAB	Through Hole	N-Channel	600 V	150 °C	-55 °C
STMicroelectronics STF8NM50N	790 mOhm	5 A	20 W	4 V	25 V			TO-220-3 Full Pack	10 V	MOSFET (Metal Oxide)	TO-220FP	Through Hole	N-Channel	500 V	150 °C	-55 °C	14 nC	364 pF
STMicroelectronics STF8N65M5	600 mOhm	7 A	25 W	5 V	25 V		690 pF	TO-220-3 Full Pack	10 V	MOSFET (Metal Oxide)	TO-220FP	Through Hole	N-Channel	650 V			15 nC		150 °C
STMicroelectronics STF8NK100Z	1.85 Ohm	6.5 A	40 W	4.5 V	30 V			TO-220-3 Full Pack	10 V	MOSFET (Metal Oxide)	TO-220FP	Through Hole	N-Channel	1000 V	150 °C	-55 °C	102 nC	2180 pF
STMicroelectronics STF8N90K5		8 A	130 W	5 V	30 V			TO-220-3 Full Pack	10 V	MOSFET (Metal Oxide)	TO-220FP	Through Hole	N-Channel	900 V	150 °C	-55 °C

Catalog

N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.