Discrete Semiconductor Products

WNSC6D20650CW6Q

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SIC SCHOTTKY DIODES WNSC6D20650CW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK

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Discrete Semiconductor Products

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SIC SCHOTTKY DIODES WNSC6D20650CW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK

Technical Specifications

Parameters and characteristics for this part

Specification	WNSC6D20650CW6Q

Current - Average Rectified (Io) (per Diode)	20 A
Current - Reverse Leakage @ Vr	50 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.45 V

Part	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction	Current - Average Rectified (Io)	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Configuration	Current - Average Rectified (Io) (per Diode)
WeEn Semiconductors WNSC6D16650B6J	80 µA	500 mA	175 °C	16 A	Surface Mount	D2PAK	1.45 V	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	780 pF
WeEn Semiconductors WNSC6D20650B6J	80 µA	500 mA	175 °C		Surface Mount	D2PAK		650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	780 pF	1.55 V
WeEn Semiconductors WNSC6D166506Q	80 µA	500 mA	175 °C	16 A	Through Hole	TO-220AC	1.45 V	650 V	TO-220-2	SiC (Silicon Carbide) Schottky	780 pF
WeEn Semiconductors WNSC6D20650CW6Q	50 µA	500 mA	175 °C		Through Hole	TO-247-3		650 V	TO-247-3	SiC (Silicon Carbide) Schottky		1.45 V	1 Pair Common Cathode	20 A
WeEn Semiconductors WNSC6D16650CW6Q	80 µA	500 mA	175 °C	16 A	Through Hole	TO-247-3	1.45 V	650 V	TO-247-3	SiC (Silicon Carbide) Schottky	780 pF
WeEn Semiconductors WNSC6D04650Q	30 µA	500 mA	175 °C	4 A	Through Hole	TO-220AC	1.4 V	650 V	TO-220-2	SiC (Silicon Carbide) Schottky	233 pF
WeEn Semiconductors WNSC6D01650MBJ	20 µA	500 mA	175 °C	1 A	Surface Mount	SMB		650 V	DO-214AA SMB	SiC (Silicon Carbide) Schottky	130 pF	1.4 V

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General part information

Diode Array 1 Pair Common Cathode 650 V 20A Through Hole TO-247-3

Technical documentation and resources

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