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TO-247-3
Discrete Semiconductor Products

WNSC6D16650CW6Q

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WeEn Semiconductors

DIODE SIL CARB 650V 16A TO247-3

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TO-247-3
Discrete Semiconductor Products

WNSC6D16650CW6Q

Active
WeEn Semiconductors

DIODE SIL CARB 650V 16A TO247-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationWNSC6D16650CW6Q
Capacitance @ Vr, F780 pF
Current - Average Rectified (Io)16 A
Current - Reverse Leakage @ Vr80 µA
Mounting TypeThrough Hole
Operating Temperature - Junction175 °C
Package / CaseTO-247-3
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageTO-247-3
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 3000$ 5.51
Tube 1$ 3.14
30$ 2.49
120$ 2.13
510$ 2.09

Description

General part information

WNSC6 Series

Diode 650 V 16A Through Hole TO-247-3

Documents

Technical documentation and resources

No documents available