
Discrete Semiconductor Products
WNSC6D16650CW6Q
ActiveWeEn Semiconductors
DIODE SIL CARB 650V 16A TO247-3
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Discrete Semiconductor Products
WNSC6D16650CW6Q
ActiveWeEn Semiconductors
DIODE SIL CARB 650V 16A TO247-3
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | WNSC6D16650CW6Q |
|---|---|
| Capacitance @ Vr, F | 780 pF |
| Current - Average Rectified (Io) | 16 A |
| Current - Reverse Leakage @ Vr | 80 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-247-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3000 | $ 5.51 | |
| Tube | 1 | $ 3.14 | ||
| 30 | $ 2.49 | |||
| 120 | $ 2.13 | |||
| 510 | $ 2.09 | |||
Description
General part information
WNSC6 Series
Diode 650 V 16A Through Hole TO-247-3
Documents
Technical documentation and resources
No documents available