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Discrete Semiconductor Products

WNSC6D20650B6J

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WeEn Semiconductors

DIODE SIL CARBIDE 650V 20A D2PAK

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WNSCXDXXXXXX
Discrete Semiconductor Products

WNSC6D20650B6J

Active
WeEn Semiconductors

DIODE SIL CARBIDE 650V 20A D2PAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationWNSC6D20650B6J
Capacitance @ Vr, F780 pF
Current - Reverse Leakage @ Vr80 µA
Mounting TypeSurface Mount
Operating Temperature - Junction175 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageD2PAK
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If [Max]1.55 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.57
10$ 3.00
100$ 2.43
Digi-Reel® 1$ 3.57
10$ 3.00
100$ 2.43
N/A 4026$ 6.07
Tape & Reel (TR) 800$ 2.38

Description

General part information

WNSC6 Series

Diode 650 V 20A Surface Mount D2PAK

Documents

Technical documentation and resources

No documents available