Discrete Semiconductor Products

IPP65R090CFD7XKSA1

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INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 90 MOHM;

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DocumentsTechnical Data Sheet EN

Discrete Semiconductor Products

IPP65R090CFD7XKSA1

Active

INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 90 MOHM;

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DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP65R090CFD7XKSA1

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	2513 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	127 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPP65R Series

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Rds On (Max) @ Id, Vgs [Max]	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPP65R074C6XKSA1	Through Hole	74 mOhm	3.5 V	480.8 W	PG-TO220-3	57.7 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	17 nC	N-Channel	MOSFET (Metal Oxide)
INFINEON IPP65R600E6XKSA1	Through Hole	600 mOhm	3.5 V	63 W	PG-TO220-3	7.3 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	23 nC	N-Channel	MOSFET (Metal Oxide)	440 pF
INFINEON IPP65R090CFD7XKSA1	Through Hole	90 mOhm	4.5 V		PG-TO220-3	25 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	53 nC	N-Channel	MOSFET (Metal Oxide)	2513 pF	127 W
INFINEON IPP65R380C6XKSA1	Through Hole	380 mOhm	3.5 V	83 W	PG-TO220-3	10.6 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	39 nC	N-Channel	MOSFET (Metal Oxide)			710 pF
INFINEON IPP65R380E6XKSA1	Through Hole	380 mOhm	3.5 V	83 W	PG-TO220-3	10.6 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	39 nC	N-Channel	MOSFET (Metal Oxide)			710 pF
INFINEON IPP65R190CFDAAKSA1	Through Hole		4.5 V	151 W	PG-TO220-3	17.5 A	20 V	150 °C	-40 °C	10 V	TO-220-3	650 V	68 nC	N-Channel	MOSFET (Metal Oxide)	1850 pF			AEC-Q101	190 mOhm	Automotive
INFINEON IPP65R660CFDAAKSA1	Through Hole		4.5 V		PG-TO220-3	6 A	20 V	150 °C	-40 °C	10 V	TO-220-3	650 V		N-Channel	MOSFET (Metal Oxide)	543 pF	62.5 W		AEC-Q101	660 mOhm	Automotive	20 nC
INFINEON IPP65R280E6XKSA1	Through Hole	280 mOhm	3.5 V	104 W	PG-TO220-3	13.8 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	45 nC	N-Channel	MOSFET (Metal Oxide)	950 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	494	$ 5.31
	Tube	1	$ 5.30
		50	$ 2.81
		100	$ 2.69
		500	$ 2.19
		1000	$ 2.12
Newark	Each	1	$ 6.56
		10	$ 5.93
		25	$ 4.22
		50	$ 4.10
		100	$ 3.96
		250	$ 3.72
		500	$ 3.48

Description

General part information

IPP65R Series

Infineon’s650V CoolMOS™ CFD7 superjunction MOSFETIPP65R090CFD7 in a TO-220 package is ideally suited for resonant topologies in industrial applications, such asserver,telecom,solar, andEV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to theCFD2 SJ MOSFETfamily, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet