IPP65R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 650V 57.7A TO220-3

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Rds On (Max) @ Id, Vgs [Max]	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPP65R074C6XKSA1	Through Hole	74 mOhm	3.5 V	480.8 W	PG-TO220-3	57.7 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	17 nC	N-Channel	MOSFET (Metal Oxide)
INFINEON IPP65R600E6XKSA1	Through Hole	600 mOhm	3.5 V	63 W	PG-TO220-3	7.3 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	23 nC	N-Channel	MOSFET (Metal Oxide)	440 pF
INFINEON IPP65R090CFD7XKSA1	Through Hole	90 mOhm	4.5 V		PG-TO220-3	25 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	53 nC	N-Channel	MOSFET (Metal Oxide)	2513 pF	127 W
INFINEON IPP65R380C6XKSA1	Through Hole	380 mOhm	3.5 V	83 W	PG-TO220-3	10.6 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	39 nC	N-Channel	MOSFET (Metal Oxide)			710 pF
INFINEON IPP65R380E6XKSA1	Through Hole	380 mOhm	3.5 V	83 W	PG-TO220-3	10.6 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	39 nC	N-Channel	MOSFET (Metal Oxide)			710 pF
INFINEON IPP65R190CFDAAKSA1	Through Hole		4.5 V	151 W	PG-TO220-3	17.5 A	20 V	150 °C	-40 °C	10 V	TO-220-3	650 V	68 nC	N-Channel	MOSFET (Metal Oxide)	1850 pF			AEC-Q101	190 mOhm	Automotive
INFINEON IPP65R660CFDAAKSA1	Through Hole		4.5 V		PG-TO220-3	6 A	20 V	150 °C	-40 °C	10 V	TO-220-3	650 V		N-Channel	MOSFET (Metal Oxide)	543 pF	62.5 W		AEC-Q101	660 mOhm	Automotive	20 nC
INFINEON IPP65R280E6XKSA1	Through Hole	280 mOhm	3.5 V	104 W	PG-TO220-3	13.8 A	20 V	150 °C	-55 °C	10 V	TO-220-3	650 V	45 nC	N-Channel	MOSFET (Metal Oxide)	950 pF