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Technical Specifications
Parameters and characteristics for this part
| Specification | IPP65R190CFDAAKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17.5 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 151 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 190 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
| Part | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Technology | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Qualification | Rds On (Max) @ Id, Vgs [Max] | Grade | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | Through Hole | 74 mOhm | 3.5 V | 480.8 W | PG-TO220-3 | 57.7 A | 20 V | 150 °C | -55 °C | 10 V | TO-220-3 | 650 V | 17 nC | N-Channel | MOSFET (Metal Oxide) | |||||||
INFINEON | Through Hole | 600 mOhm | 3.5 V | 63 W | PG-TO220-3 | 7.3 A | 20 V | 150 °C | -55 °C | 10 V | TO-220-3 | 650 V | 23 nC | N-Channel | MOSFET (Metal Oxide) | 440 pF | ||||||
 INFINEON | Through Hole | 90 mOhm | 4.5 V | PG-TO220-3 | 25 A | 20 V | 150 °C | -55 °C | 10 V | TO-220-3 | 650 V | 53 nC | N-Channel | MOSFET (Metal Oxide) | 2513 pF | 127 W | ||||||
INFINEON | Through Hole | 380 mOhm | 3.5 V | 83 W | PG-TO220-3 | 10.6 A | 20 V | 150 °C | -55 °C | 10 V | TO-220-3 | 650 V | 39 nC | N-Channel | MOSFET (Metal Oxide) | 710 pF | ||||||
INFINEON | Through Hole | 380 mOhm | 3.5 V | 83 W | PG-TO220-3 | 10.6 A | 20 V | 150 °C | -55 °C | 10 V | TO-220-3 | 650 V | 39 nC | N-Channel | MOSFET (Metal Oxide) | 710 pF | ||||||
INFINEON | Through Hole | 4.5 V | 151 W | PG-TO220-3 | 17.5 A | 20 V | 150 °C | -40 °C | 10 V | TO-220-3 | 650 V | 68 nC | N-Channel | MOSFET (Metal Oxide) | 1850 pF | AEC-Q101 | 190 mOhm | Automotive | ||||
INFINEON | Through Hole | 4.5 V | PG-TO220-3 | 6 A | 20 V | 150 °C | -40 °C | 10 V | TO-220-3 | 650 V | N-Channel | MOSFET (Metal Oxide) | 543 pF | 62.5 W | AEC-Q101 | 660 mOhm | Automotive | 20 nC | ||||
INFINEON | Through Hole | 280 mOhm | 3.5 V | 104 W | PG-TO220-3 | 13.8 A | 20 V | 150 °C | -55 °C | 10 V | TO-220-3 | 650 V | 45 nC | N-Channel | MOSFET (Metal Oxide) | 950 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
IPP65R Series
N-Channel 650 V 17.5A (Tc) 151W (Tc) Through Hole PG-TO220-3
Documents
Technical documentation and resources
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