Zenode.ai Logo
Beta
TO-220-3
Discrete Semiconductor Products

IPP65R380C6XKSA1

Obsolete
INFINEON

MOSFET N-CH 650V 10.6A TO220-3

Deep-Dive with AI

Search across all available documentation for this part.

TO-220-3
Discrete Semiconductor Products

IPP65R380C6XKSA1

Obsolete
INFINEON

MOSFET N-CH 650V 10.6A TO220-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP65R380C6XKSA1
Current - Continuous Drain (Id) @ 25°C10.6 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs39 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]710 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs380 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V
PartMounting TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdPower Dissipation (Max)Supplier Device PackageCurrent - Continuous Drain (Id) @ 25°CVgs (Max)Operating Temperature [Max]Operating Temperature [Min]Drive Voltage (Max Rds On, Min Rds On)Package / CaseDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ VgsFET TypeTechnologyInput Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max) [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]QualificationRds On (Max) @ Id, Vgs [Max]GradeGate Charge (Qg) (Max) @ Vgs [Max]
Through Hole
74 mOhm
3.5 V
480.8 W
PG-TO220-3
57.7 A
20 V
150 °C
-55 °C
10 V
TO-220-3
650 V
17 nC
N-Channel
MOSFET (Metal Oxide)
Through Hole
600 mOhm
3.5 V
63 W
PG-TO220-3
7.3 A
20 V
150 °C
-55 °C
10 V
TO-220-3
650 V
23 nC
N-Channel
MOSFET (Metal Oxide)
440 pF
Through Hole
90 mOhm
4.5 V
PG-TO220-3
25 A
20 V
150 °C
-55 °C
10 V
TO-220-3
650 V
53 nC
N-Channel
MOSFET (Metal Oxide)
2513 pF
127 W
Through Hole
380 mOhm
3.5 V
83 W
PG-TO220-3
10.6 A
20 V
150 °C
-55 °C
10 V
TO-220-3
650 V
39 nC
N-Channel
MOSFET (Metal Oxide)
710 pF
Through Hole
380 mOhm
3.5 V
83 W
PG-TO220-3
10.6 A
20 V
150 °C
-55 °C
10 V
TO-220-3
650 V
39 nC
N-Channel
MOSFET (Metal Oxide)
710 pF
Through Hole
4.5 V
151 W
PG-TO220-3
17.5 A
20 V
150 °C
-40 °C
10 V
TO-220-3
650 V
68 nC
N-Channel
MOSFET (Metal Oxide)
1850 pF
AEC-Q101
190 mOhm
Automotive
Through Hole
4.5 V
PG-TO220-3
6 A
20 V
150 °C
-40 °C
10 V
TO-220-3
650 V
N-Channel
MOSFET (Metal Oxide)
543 pF
62.5 W
AEC-Q101
660 mOhm
Automotive
20 nC
Through Hole
280 mOhm
3.5 V
104 W
PG-TO220-3
13.8 A
20 V
150 °C
-55 °C
10 V
TO-220-3
650 V
45 nC
N-Channel
MOSFET (Metal Oxide)
950 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPP65R Series

N-Channel 650 V 10.6A (Tc) 83W (Tc) Through Hole PG-TO220-3

Documents

Technical documentation and resources

No documents available