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RN2901 - Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-363(US6)
Discrete Semiconductor Products

HN1C01FU-GR,LXHF

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN + NPN BIPOLAR TRANSISTOR, 50 V, 0.15 A, SOT-363(US6)

RN2901 - Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-363(US6)
Discrete Semiconductor Products

HN1C01FU-GR,LXHF

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN + NPN BIPOLAR TRANSISTOR, 50 V, 0.15 A, SOT-363(US6)

Technical Specifications

Parameters and characteristics for this part

SpecificationHN1C01FU-GR,LXHF
Current - Collector (Ic) (Max) [Max]150 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce200 hFE
Mounting TypeSurface Mount
Package / CaseSOT-363, SC-88, 6-TSSOP
Power - Max [Max]200 mW
Supplier Device PackageUS6
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 6000$ 0.66

Description

General part information

HN1C01FU Series

BIPOLAR TRANSISTORS, NPN + NPN BIPOLAR TRANSISTOR, 50 V, 0.15 A, SOT-363(US6)