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HN1C01FU-Y,LXHF
Discrete Semiconductor Products

HN1C01FU-Y,LXHF

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS - BJT AUTO AEC-Q NPN + NPN TR VCEO:50V IC:0.15A HFE:120-240 SOT-363 (US6)

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HN1C01FU-Y,LXHF
Discrete Semiconductor Products

HN1C01FU-Y,LXHF

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS - BJT AUTO AEC-Q NPN + NPN TR VCEO:50V IC:0.15A HFE:120-240 SOT-363 (US6)

Technical Specifications

Parameters and characteristics for this part

SpecificationHN1C01FU-Y,LXHF
Current - Collector (Ic) (Max) [Max]150 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Mounting TypeSurface Mount
Package / CaseSOT-363, SC-88, 6-TSSOP
Power - Max [Max]200 mW
Supplier Device PackageUS6
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 5870$ 0.64
MouserN/A 1$ 0.56
10$ 0.37
100$ 0.26
500$ 0.19
1000$ 0.17
3000$ 0.14
6000$ 0.13
9000$ 0.13

Description

General part information

HN1C01FU Series

BIPOLAR TRANSISTORS - BJT AUTO AEC-Q NPN + NPN TR VCEO:50V IC:0.15A HFE:120-240 SOT-363 (US6)