
Discrete Semiconductor Products
HN1C01FU-Y,LXHF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS - BJT AUTO AEC-Q NPN + NPN TR VCEO:50V IC:0.15A HFE:120-240 SOT-363 (US6)
Deep-Dive with AI
Search across all available documentation for this part.

Discrete Semiconductor Products
HN1C01FU-Y,LXHF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS - BJT AUTO AEC-Q NPN + NPN TR VCEO:50V IC:0.15A HFE:120-240 SOT-363 (US6)
Technical Specifications
Parameters and characteristics for this part
| Specification | HN1C01FU-Y,LXHF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 150 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-363, SC-88, 6-TSSOP |
| Power - Max [Max] | 200 mW |
| Supplier Device Package | US6 |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HN1C01FU Series
BIPOLAR TRANSISTORS - BJT AUTO AEC-Q NPN + NPN TR VCEO:50V IC:0.15A HFE:120-240 SOT-363 (US6)
Documents
Technical documentation and resources