Discrete Semiconductor Products

HN1C01FU-Y,LF

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BIPOLAR TRANSISTORS, NPN + NPN BIPOLAR TRANSISTOR, 50 V, 0.15 A, SOT-363(US6)

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS, NPN + NPN BIPOLAR TRANSISTOR, 50 V, 0.15 A, SOT-363(US6)

Technical Specifications

Parameters and characteristics for this part

Specification	HN1C01FU-Y,LF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Supplier Device Package	US6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Operating Temperature	Transistor Type	Package / Case	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce
Toshiba Semiconductor and Storage HN1C01FU-Y,LF	125 ¯C	2 NPN (Dual)	6-TSSOP SC-88 SOT-363	Surface Mount	200 mW	50 V	120	150 mA	US6	100 nA	250 mV
Toshiba Semiconductor and Storage HN1C01FU-GR,LF	125 ¯C	2 NPN (Dual)	6-TSSOP SC-88 SOT-363	Surface Mount	200 mW	50 V		150 mA	US6	100 nA	250 mV	200 hFE
Toshiba Semiconductor and Storage HN1C01FU-GR,LXHF		2 NPN (Dual)	6-TSSOP SC-88 SOT-363	Surface Mount	200 mW	50 V		150 mA	US6	100 nA	250 mV	200 hFE
Toshiba Semiconductor and Storage HN1C01FU-Y,LXHF		2 NPN (Dual)	6-TSSOP SC-88 SOT-363	Surface Mount	200 mW	50 V	120	150 mA	US6	100 nA	250 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly