HN1C01FU Series
Manufacturer: Toshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN + NPN BIPOLAR TRANSISTOR, 50 V, 0.15 A, SOT-363(US6)
| Part | Operating Temperature | Transistor Type | Package / Case | Mounting Type | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 125 ¯C | 2 NPN (Dual) | 6-TSSOP SC-88 SOT-363 | Surface Mount | 200 mW | 50 V | 120 | 150 mA | US6 | 100 nA | 250 mV | |
Toshiba Semiconductor and Storage | 125 ¯C | 2 NPN (Dual) | 6-TSSOP SC-88 SOT-363 | Surface Mount | 200 mW | 50 V | 150 mA | US6 | 100 nA | 250 mV | 200 hFE | |
Toshiba Semiconductor and Storage | 2 NPN (Dual) | 6-TSSOP SC-88 SOT-363 | Surface Mount | 200 mW | 50 V | 150 mA | US6 | 100 nA | 250 mV | 200 hFE | ||
Toshiba Semiconductor and Storage | 2 NPN (Dual) | 6-TSSOP SC-88 SOT-363 | Surface Mount | 200 mW | 50 V | 120 | 150 mA | US6 | 100 nA | 250 mV |