Integrated Circuits (ICs)

LF356N

Obsolete

Texas Instruments

IC OPAMP JFET 1 CIRCUIT 8DIP

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Integrated Circuits (ICs)

LF356N

Obsolete

Texas Instruments

IC OPAMP JFET 1 CIRCUIT 8DIP

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LF356N

Amplifier Type	J-FET
Current - Input Bias	30 pA
Current - Supply	5 mA
Gain Bandwidth Product	5 MHz
Mounting Type	Through Hole
Number of Circuits	1
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Slew Rate	12 V/µs
Supplier Device Package	8-PDIP
Voltage - Input Offset	3 mV
Voltage - Supply Span (Max) [Max]	30 V
Voltage - Supply Span (Min) [Min]	30 V

LF356-MIL Series

Military-grade, single, 30-V, 5-MHz, FET-input operational amplifier

Part	Amplifier Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Input Offset	Supplier Device Package	Current - Input Bias	Gain Bandwidth Product	Voltage - Supply Span (Min) [Min]	Number of Circuits	Voltage - Supply Span (Max) [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Current - Supply	Mounting Type	Slew Rate	Package / Case	Package / Case
Texas Instruments LF356M/NOPB	J-FET	70 °C	0 °C	3 mV	8-SOIC	30 pA	5 MHz	30 V	1	30 V	8-SOIC	3.9 mm	0.154 in	5 mA	Surface Mount	12 V/µs
Texas Instruments LF356N	J-FET	70 °C	0 °C	3 mV	8-PDIP	30 pA	5 MHz	30 V	1	30 V	8-DIP			5 mA	Through Hole	12 V/µs	0.3 in	7.62 mm
Texas Instruments LF356 MWC	J-FET	85 °C	-40 °C	3 mV	Wafersale	30 pA	5 MHz	10 V	1	36 V	Die			5 mA	Surface Mount	12 V/µs
Texas Instruments LF356MX/NOPB	J-FET	70 °C	0 °C	3 mV	8-SOIC	30 pA	5 MHz	30 V	1	30 V	8-SOIC	3.9 mm	0.154 in	5 mA	Surface Mount	12 V/µs
Texas Instruments LF356MX	J-FET	70 °C	0 °C	3 mV	8-SOIC	30 pA	5 MHz	30 V	1	30 V	8-SOIC	3.9 mm	0.154 in	5 mA	Surface Mount	12 V/µs
Texas Instruments LF356M	J-FET	70 °C	0 °C	3 mV	8-SOIC	30 pA	5 MHz	30 V	1	30 V	8-SOIC	3.9 mm	0.154 in	5 mA	Surface Mount	12 V/µs
Texas Instruments LF356N/NOPB	J-FET	70 °C	0 °C	3 mV	8-PDIP	30 pA	5 MHz	30 V	1	30 V	8-DIP			5 mA	Through Hole	12 V/µs	0.3 in	7.62 mm
Texas Instruments LF356H	J-FET	70 °C	0 °C	3 mV	TO-99-8	30 pA	5 MHz	30 V	1	30 V	TO-99-8 Metal Can			5 mA	Through Hole	12 V/µs

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

LF356-MIL Series

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Documents

Technical documentation and resources

No documents available