LF356-MIL Series

Military-grade, single, 30-V, 5-MHz, FET-input operational amplifier

Catalog

Military-grade, single, 30-V, 5-MHz, FET-input operational amplifier

Part	Amplifier Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Input Offset	Supplier Device Package	Current - Input Bias	Gain Bandwidth Product	Voltage - Supply Span (Min) [Min]	Number of Circuits	Voltage - Supply Span (Max) [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Current - Supply	Mounting Type	Slew Rate	Package / Case	Package / Case
Texas Instruments LF356M/NOPB	J-FET	70 °C	0 °C	3 mV	8-SOIC	30 pA	5 MHz	30 V	1	30 V	8-SOIC	3.9 mm	0.154 in	5 mA	Surface Mount	12 V/µs
Texas Instruments LF356N	J-FET	70 °C	0 °C	3 mV	8-PDIP	30 pA	5 MHz	30 V	1	30 V	8-DIP			5 mA	Through Hole	12 V/µs	0.3 in	7.62 mm
Texas Instruments LF356 MWC	J-FET	85 °C	-40 °C	3 mV	Wafersale	30 pA	5 MHz	10 V	1	36 V	Die			5 mA	Surface Mount	12 V/µs
Texas Instruments LF356MX/NOPB	J-FET	70 °C	0 °C	3 mV	8-SOIC	30 pA	5 MHz	30 V	1	30 V	8-SOIC	3.9 mm	0.154 in	5 mA	Surface Mount	12 V/µs
Texas Instruments LF356MX	J-FET	70 °C	0 °C	3 mV	8-SOIC	30 pA	5 MHz	30 V	1	30 V	8-SOIC	3.9 mm	0.154 in	5 mA	Surface Mount	12 V/µs
Texas Instruments LF356M	J-FET	70 °C	0 °C	3 mV	8-SOIC	30 pA	5 MHz	30 V	1	30 V	8-SOIC	3.9 mm	0.154 in	5 mA	Surface Mount	12 V/µs
Texas Instruments LF356N/NOPB	J-FET	70 °C	0 °C	3 mV	8-PDIP	30 pA	5 MHz	30 V	1	30 V	8-DIP			5 mA	Through Hole	12 V/µs	0.3 in	7.62 mm
Texas Instruments LF356H	J-FET	70 °C	0 °C	3 mV	TO-99-8	30 pA	5 MHz	30 V	1	30 V	TO-99-8 Metal Can			5 mA	Through Hole	12 V/µs

Catalog

Military-grade, single, 30-V, 5-MHz, FET-input operational amplifier

Key Features

• AdvantagesReplace Expensive Hybrid and Module FET Op AmpsRugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input DevicesExcellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f CornerOffset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic AmplifiersNew Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability ProblemsInternal Compensation and Large Differential Input Voltage CapabilityCommon FeaturesLow Input Bias Current: 30 pALow Input Offset Current: 3 pAHigh Input Impedance: 1012ΩLow Input Noise Current: 0.01 pA/√HzHigh Common-Mode Rejection Ratio: 100 dBLarge DC Voltage Gain: 106 dBUncommon FeaturesExtremely Fast Settling Time to 0.01%: 1.5 µsFast Slew Rate: 12 V/µsWide Gain Bandwidth: 5 MHzLow Input Noise Voltage: 12 nV/√HzAdvantagesReplace Expensive Hybrid and Module FET Op AmpsRugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input DevicesExcellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f CornerOffset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic AmplifiersNew Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability ProblemsInternal Compensation and Large Differential Input Voltage CapabilityCommon FeaturesLow Input Bias Current: 30 pALow Input Offset Current: 3 pAHigh Input Impedance: 1012ΩLow Input Noise Current: 0.01 pA/√HzHigh Common-Mode Rejection Ratio: 100 dBLarge DC Voltage Gain: 106 dBUncommon FeaturesExtremely Fast Settling Time to 0.01%: 1.5 µsFast Slew Rate: 12 V/µsWide Gain Bandwidth: 5 MHzLow Input Noise Voltage: 12 nV/√Hz

Description

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner. The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.