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TO-99-8 Pkg
Integrated Circuits (ICs)

LF356H

Active
Texas Instruments

MILITARY-GRADE, SINGLE, 30-V, 5-MHZ, FET-INPUT OPERATIONAL AMPLIFIER

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TO-99-8 Pkg
Integrated Circuits (ICs)

LF356H

Active
Texas Instruments

MILITARY-GRADE, SINGLE, 30-V, 5-MHZ, FET-INPUT OPERATIONAL AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationLF356H
Amplifier TypeJ-FET
Current - Input Bias30 pA
Current - Supply5 mA
Gain Bandwidth Product5 MHz
Mounting TypeThrough Hole
Number of Circuits1
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / CaseTO-99-8 Metal Can
Slew Rate12 V/µs
Supplier Device PackageTO-99-8
Voltage - Input Offset3 mV
Voltage - Supply Span (Max) [Max]30 V
Voltage - Supply Span (Min) [Min]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 15.83
10$ 14.55
25$ 13.94
100$ 12.28
250$ 11.68
500$ 10.93
Texas InstrumentsOTHER 1$ 14.22
100$ 12.43
250$ 9.58
1000$ 8.57

Description

General part information

LF356-MIL Series

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.