Discrete Semiconductor Products
STY100NM60N
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.025 OHM TYP., 98 A, MDMESH(TM) II POWER MOSFET IN MAX247 PACKAGE
Discrete Semiconductor Products
STY100NM60N
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.025 OHM TYP., 98 A, MDMESH(TM) II POWER MOSFET IN MAX247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STY100NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 98 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 625 W |
| Rds On (Max) @ Id, Vgs | 29 mOhm |
| Supplier Device Package | MAX247™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STY100NM60N Series
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources