Discrete Semiconductor Products

STY100NS20FD

Obsolete

MOSFET N-CH 200V 100A MAX247

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 100A MAX247

Technical Specifications

Parameters and characteristics for this part

Specification	STY100NS20FD

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	360 nC
Input Capacitance (Ciss) (Max) @ Vds	7900 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	450 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	MAX247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Vgs (Max)	Operating Temperature
STMicroelectronics STY100NM60N	98 A	25 V	TO-247-3	625 W	600 V	MOSFET (Metal Oxide)	4 V	MAX247™	Through Hole	29 mOhm	330 nC	N-Channel	9600 pF	10 V	150 °C	-55 °C
STMicroelectronics STY100NS20FD	100 A		TO-247-3		200 V	MOSFET (Metal Oxide)	4 V	MAX247™	Through Hole	24 mOhm	360 nC	N-Channel	7900 pF	10 V			450 W	20 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 8.13

General part information

N-Channel 200 V 100A (Tc) 450W (Tc) Through Hole MAX247™

Technical documentation and resources