STY100 Series

Catalog

N-CHANNEL 600 V, 0.025 OHM TYP., 98 A, MDMESH(TM) II POWER MOSFET IN MAX247 PACKAGE

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Vgs (Max)	Operating Temperature
STMicroelectronics STY100NM60N	98 A	25 V	TO-247-3	625 W	600 V	MOSFET (Metal Oxide)	4 V	MAX247™	Through Hole	29 mOhm	330 nC	N-Channel	9600 pF	10 V	150 °C	-55 °C
STMicroelectronics STY100NS20FD	100 A		TO-247-3		200 V	MOSFET (Metal Oxide)	4 V	MAX247™	Through Hole	24 mOhm	360 nC	N-Channel	7900 pF	10 V			450 W	20 V	150 °C